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Correlations in the local density of states probed by single electron tunneling

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<mark>Journal publication date</mark>1/01/2002
<mark>Journal</mark>Physica E: Low-dimensional Systems and Nanostructures
Issue number1-4
Volume12
Number of pages4
Pages (from-to)853-856
Publication statusPublished
Original languageEnglish
Event14th International Conference on the - Prague, Czech Republic
Duration: 30/07/20013/08/2001

Conference

Conference14th International Conference on the
CountryCzech Republic
CityPrague
Period30/07/013/08/01

Abstract

Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.