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Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>21/01/2006
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number2
Number of pages7
Pages (from-to)255-261
<mark>Original language</mark>English


We report on an experimental investigation of the influence of different design parameters and their relative importance in the fabrication of uncooled InAs light emitting diodes. In addition, optimization of the key variables involved in the liquid phase growth of these devices, the careful consideration of carrier confinement, current spreading, re-absorption and optical extraction were also found to be essential in order to obtain maximum output.