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Design procedure for monolithic matrix amplifier

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>01/1997
<mark>Journal</mark>IEEE Transactions on Microwave Theory and Techniques
Issue number1
Number of pages5
Pages (from-to)135-139
<mark>Original language</mark>English


A procedure for the design of monolithic matrix amplifier is proposed. A simplified expression for small signal gain based on unilateral field-effect transistor (FET) model is derived. In particular, the Design-Oriented FET model previously published is adopted. The introduction of a set of design charts allows the designer a fast and accurate prediction of low frequency gain and 3-dB cutoff frequency of a given matrix amplifier. Good agreement with experimental data and simulations confirms the validity of the proposed design method.