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Design procedure for monolithic matrix amplifier

Research output: Contribution to journalJournal article


Journal publication date01/1997
JournalIEEE Transactions on Microwave Theory and Techniques
Number of pages5
Original languageEnglish


A procedure for the design of monolithic matrix amplifier is proposed. A simplified expression for small signal gain based on unilateral field-effect transistor (FET) model is derived. In particular, the Design-Oriented FET model previously published is adopted. The introduction of a set of design charts allows the designer a fast and accurate prediction of low frequency gain and 3-dB cutoff frequency of a given matrix amplifier. Good agreement with experimental data and simulations confirms the validity of the proposed design method.