Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 01/1997 |
|---|---|
| <mark>Journal</mark> | IEEE Transactions on Microwave Theory and Techniques |
| Issue number | 1 |
| Volume | 45 |
| Number of pages | 5 |
| Pages (from-to) | 135-139 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
A procedure for the design of monolithic matrix amplifier is proposed. A simplified expression for small signal gain based on unilateral field-effect transistor (FET) model is derived. In particular, the Design-Oriented FET model previously published is adopted. The introduction of a set of design charts allows the designer a fast and accurate prediction of low frequency gain and 3-dB cutoff frequency of a given matrix amplifier. Good agreement with experimental data and simulations confirms the validity of the proposed design method.