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Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy

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Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. / McIndo, Christopher ; Hayes, David; Papageorgiou, Andreas et al.
In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 91, 07.2017, p. 169-172.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

McIndo, C, Hayes, D, Papageorgiou, A, Hanks, L, Smith, G, Allford, C, Zhang, S, Clarke, E & Buckle, P 2017, 'Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy', Physica E: Low-dimensional Systems and Nanostructures, vol. 91, pp. 169-172. https://doi.org/10.1016/j.physe.2017.04.019

APA

McIndo, C., Hayes, D., Papageorgiou, A., Hanks, L., Smith, G., Allford, C., Zhang, S., Clarke, E., & Buckle, P. (2017). Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures, 91, 169-172. https://doi.org/10.1016/j.physe.2017.04.019

Vancouver

McIndo C, Hayes D, Papageorgiou A, Hanks L, Smith G, Allford C et al. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures. 2017 Jul;91:169-172. Epub 2017 Apr 22. doi: 10.1016/j.physe.2017.04.019

Author

McIndo, Christopher ; Hayes, David ; Papageorgiou, Andreas et al. / Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. In: Physica E: Low-dimensional Systems and Nanostructures. 2017 ; Vol. 91. pp. 169-172.

Bibtex

@article{009cfae7aa2d445ba172b6f99214861f,
title = "Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy",
abstract = "We report magnetotransport measurements of InSb/Al1−xInxSb quantum well structures at low temperature (3 K), with evidence for 3 characteristic regimes of electron carrier density and mobility. We observe characteristic surface structure using differential interference contrast DIC (Nomarski) optical imaging, and through use of image analysis techniques, we are able to extract a representative average grain feature size for this surface structure. From this we deduce a limiting low temperature scattering mechanism not previously incorporated in transport lifetime modelling of this system, with this improved model giving strong agreement with standard low temperature Hall measurements. We have demonstrated that the mobility in such a material is critically limited by quality from the buffer layer growth, as opposed to fundamental material scattering mechanisms. This suggests that the material has immense potential for mobility improvement over that reported to date.",
keywords = "Magnetotransport, Nomarski microscopy, Electron scattering, Transport lifetime",
author = "Christopher McIndo and David Hayes and Andreas Papageorgiou and Laura Hanks and George Smith and Craig Allford and Shiyong Zhang and Edmund Clarke and Philip Buckle",
year = "2017",
month = jul,
doi = "10.1016/j.physe.2017.04.019",
language = "English",
volume = "91",
pages = "169--172",
journal = "Physica E: Low-dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy

AU - McIndo, Christopher

AU - Hayes, David

AU - Papageorgiou, Andreas

AU - Hanks, Laura

AU - Smith, George

AU - Allford, Craig

AU - Zhang, Shiyong

AU - Clarke, Edmund

AU - Buckle, Philip

PY - 2017/7

Y1 - 2017/7

N2 - We report magnetotransport measurements of InSb/Al1−xInxSb quantum well structures at low temperature (3 K), with evidence for 3 characteristic regimes of electron carrier density and mobility. We observe characteristic surface structure using differential interference contrast DIC (Nomarski) optical imaging, and through use of image analysis techniques, we are able to extract a representative average grain feature size for this surface structure. From this we deduce a limiting low temperature scattering mechanism not previously incorporated in transport lifetime modelling of this system, with this improved model giving strong agreement with standard low temperature Hall measurements. We have demonstrated that the mobility in such a material is critically limited by quality from the buffer layer growth, as opposed to fundamental material scattering mechanisms. This suggests that the material has immense potential for mobility improvement over that reported to date.

AB - We report magnetotransport measurements of InSb/Al1−xInxSb quantum well structures at low temperature (3 K), with evidence for 3 characteristic regimes of electron carrier density and mobility. We observe characteristic surface structure using differential interference contrast DIC (Nomarski) optical imaging, and through use of image analysis techniques, we are able to extract a representative average grain feature size for this surface structure. From this we deduce a limiting low temperature scattering mechanism not previously incorporated in transport lifetime modelling of this system, with this improved model giving strong agreement with standard low temperature Hall measurements. We have demonstrated that the mobility in such a material is critically limited by quality from the buffer layer growth, as opposed to fundamental material scattering mechanisms. This suggests that the material has immense potential for mobility improvement over that reported to date.

KW - Magnetotransport

KW - Nomarski microscopy

KW - Electron scattering

KW - Transport lifetime

U2 - 10.1016/j.physe.2017.04.019

DO - 10.1016/j.physe.2017.04.019

M3 - Journal article

VL - 91

SP - 169

EP - 172

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

ER -