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    Rights statement: This is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 395, 2017 DOI: 10.1016/j.apsusc.2016.04.131

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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. / Fernández-Delgado, N.; Herrera, M.; Chisholm, M. F.; Ahmad Kamarudin, Mazliana; Zhuang, Qiandong; Hayne, Manus; Molina, S. I.

In: Applied Surface Science, Vol. 395, 15.02.2017, p. 136-139.

Research output: Contribution to journalJournal article

Harvard

Fernández-Delgado, N, Herrera, M, Chisholm, MF, Ahmad Kamarudin, M, Zhuang, Q, Hayne, M & Molina, SI 2017, 'Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots', Applied Surface Science, vol. 395, pp. 136-139. https://doi.org/10.1016/j.apsusc.2016.04.131

APA

Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M., & Molina, S. I. (2017). Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. Applied Surface Science, 395, 136-139. https://doi.org/10.1016/j.apsusc.2016.04.131

Vancouver

Fernández-Delgado N, Herrera M, Chisholm MF, Ahmad Kamarudin M, Zhuang Q, Hayne M et al. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. Applied Surface Science. 2017 Feb 15;395:136-139. https://doi.org/10.1016/j.apsusc.2016.04.131

Author

Fernández-Delgado, N. ; Herrera, M. ; Chisholm, M. F. ; Ahmad Kamarudin, Mazliana ; Zhuang, Qiandong ; Hayne, Manus ; Molina, S. I. / Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. In: Applied Surface Science. 2017 ; Vol. 395. pp. 136-139.

Bibtex

@article{e922e94c2d7849c8bbbced82f71433ba,
title = "Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots",
abstract = "In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.",
keywords = "GaSb, quantum dot, scanning transmission electron microscopy, thermal annealing",
author = "N. Fern{\'a}ndez-Delgado and M. Herrera and Chisholm, {M. F.} and {Ahmad Kamarudin}, Mazliana and Qiandong Zhuang and Manus Hayne and Molina, {S. I.}",
note = "This is the author{\textquoteright}s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 395, 2017 DOI: 10.1016/j.apsusc.2016.04.131",
year = "2017",
month = feb,
day = "15",
doi = "10.1016/j.apsusc.2016.04.131",
language = "English",
volume = "395",
pages = "136--139",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

AU - Fernández-Delgado, N.

AU - Herrera, M.

AU - Chisholm, M. F.

AU - Ahmad Kamarudin, Mazliana

AU - Zhuang, Qiandong

AU - Hayne, Manus

AU - Molina, S. I.

N1 - This is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 395, 2017 DOI: 10.1016/j.apsusc.2016.04.131

PY - 2017/2/15

Y1 - 2017/2/15

N2 - In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

AB - In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

KW - GaSb

KW - quantum dot

KW - scanning transmission electron microscopy

KW - thermal annealing

U2 - 10.1016/j.apsusc.2016.04.131

DO - 10.1016/j.apsusc.2016.04.131

M3 - Journal article

VL - 395

SP - 136

EP - 139

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -