Rights statement: This is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 395, 2017 DOI: 10.1016/j.apsusc.2016.04.131
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Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
AU - Fernández-Delgado, N.
AU - Herrera, M.
AU - Chisholm, M. F.
AU - Ahmad Kamarudin, Mazliana
AU - Zhuang, Qiandong
AU - Hayne, Manus
AU - Molina, S. I.
N1 - This is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 395, 2017 DOI: 10.1016/j.apsusc.2016.04.131
PY - 2017/2/15
Y1 - 2017/2/15
N2 - In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.
AB - In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3. Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.
KW - GaSb
KW - quantum dot
KW - scanning transmission electron microscopy
KW - thermal annealing
U2 - 10.1016/j.apsusc.2016.04.131
DO - 10.1016/j.apsusc.2016.04.131
M3 - Journal article
VL - 395
SP - 136
EP - 139
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -