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  • PhysRevB.77.075420

    Rights statement: © 2008 The American Physical Society

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Effect of disorder on a graphene p-n junction

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Effect of disorder on a graphene p-n junction. / Fogler, M. M.; Novikov, Dmitri S; Glazman, Leonid et al.
In: Physical review B, Vol. 77, No. 7, 075420, 01.02.2008.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Fogler, MM, Novikov, DS, Glazman, L & Shklovskii, B 2008, 'Effect of disorder on a graphene p-n junction', Physical review B, vol. 77, no. 7, 075420. https://doi.org/10.1103/PhysRevB.77.075420

APA

Fogler, M. M., Novikov, D. S., Glazman, L., & Shklovskii, B. (2008). Effect of disorder on a graphene p-n junction. Physical review B, 77(7), Article 075420. https://doi.org/10.1103/PhysRevB.77.075420

Vancouver

Fogler MM, Novikov DS, Glazman L, Shklovskii B. Effect of disorder on a graphene p-n junction. Physical review B. 2008 Feb 1;77(7):075420. doi: 10.1103/PhysRevB.77.075420

Author

Fogler, M. M. ; Novikov, Dmitri S ; Glazman, Leonid et al. / Effect of disorder on a graphene p-n junction. In: Physical review B. 2008 ; Vol. 77, No. 7.

Bibtex

@article{023b55da31484ac2bd42517f64e0676b,
title = "Effect of disorder on a graphene p-n junction",
abstract = "We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.",
author = "Fogler, {M. M.} and Novikov, {Dmitri S} and Leonid Glazman and Boris Shklovskii",
note = "{\textcopyright} 2008 The American Physical Society",
year = "2008",
month = feb,
day = "1",
doi = "10.1103/PhysRevB.77.075420",
language = "English",
volume = "77",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "7",

}

RIS

TY - JOUR

T1 - Effect of disorder on a graphene p-n junction

AU - Fogler, M. M.

AU - Novikov, Dmitri S

AU - Glazman, Leonid

AU - Shklovskii, Boris

N1 - © 2008 The American Physical Society

PY - 2008/2/1

Y1 - 2008/2/1

N2 - We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

AB - We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

U2 - 10.1103/PhysRevB.77.075420

DO - 10.1103/PhysRevB.77.075420

M3 - Journal article

VL - 77

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 7

M1 - 075420

ER -