Home > Research > Publications & Outputs > Effect of low nitrogen concentrations on the el...

Associated organisational unit

View graph of relations

Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

Research output: Contribution to journalJournal article

Published

Standard

Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx. / Patane, A; Feu, W. H. M.; Makarovsky, O.; Drachenko, O.; Eaves, L.; Krier, Anthony; Zhuang, Qian D.; Helm, M.; Goiran, M.; Hill, G.

In: Physical review B, Vol. 80, No. 11, 16.09.2009, p. 115207.

Research output: Contribution to journalJournal article

Harvard

Patane, A, Feu, WHM, Makarovsky, O, Drachenko, O, Eaves, L, Krier, A, Zhuang, QD, Helm, M, Goiran, M & Hill, G 2009, 'Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.' Physical review B, vol. 80, no. 11, pp. 115207. https://doi.org/10.1103/PhysRevB.80.115207

APA

Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., ... Hill, G. (2009). Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx. Physical review B, 80(11), 115207. https://doi.org/10.1103/PhysRevB.80.115207

Vancouver

Patane A, Feu WHM, Makarovsky O, Drachenko O, Eaves L, Krier A et al. Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx. Physical review B. 2009 Sep 16;80(11):115207. https://doi.org/10.1103/PhysRevB.80.115207

Author

Patane, A ; Feu, W. H. M. ; Makarovsky, O. ; Drachenko, O. ; Eaves, L. ; Krier, Anthony ; Zhuang, Qian D. ; Helm, M. ; Goiran, M. ; Hill, G. / Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx. In: Physical review B. 2009 ; Vol. 80, No. 11. pp. 115207.

Bibtex

@article{4ef14db406ba45dcb9e8db6652a6a5a8,
title = "Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.",
abstract = "We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of n-type InAs1−xNx epilayers grown on GaAs with x up to 1{\%}. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs1−xNx. In GaAs1−xNx electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x (∼0.1{\%}). These phenomena are significantly weaker in InAs1−xNx due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs1−xNx the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths (lφ∼100 nm at 2 K) and electron mobilities (μ=6×103 cm2 V−1 s−1 at 300 K) that remain relatively large even at x=1{\%}.",
author = "A Patane and Feu, {W. H. M.} and O. Makarovsky and O. Drachenko and L. Eaves and Anthony Krier and Zhuang, {Qian D.} and M. Helm and M. Goiran and G. Hill",
year = "2009",
month = "9",
day = "16",
doi = "10.1103/PhysRevB.80.115207",
language = "English",
volume = "80",
pages = "115207",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "11",

}

RIS

TY - JOUR

T1 - Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

AU - Patane, A

AU - Feu, W. H. M.

AU - Makarovsky, O.

AU - Drachenko, O.

AU - Eaves, L.

AU - Krier, Anthony

AU - Zhuang, Qian D.

AU - Helm, M.

AU - Goiran, M.

AU - Hill, G.

PY - 2009/9/16

Y1 - 2009/9/16

N2 - We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of n-type InAs1−xNx epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs1−xNx. In GaAs1−xNx electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x (∼0.1%). These phenomena are significantly weaker in InAs1−xNx due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs1−xNx the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths (lφ∼100 nm at 2 K) and electron mobilities (μ=6×103 cm2 V−1 s−1 at 300 K) that remain relatively large even at x=1%.

AB - We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of n-type InAs1−xNx epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs1−xNx. In GaAs1−xNx electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x (∼0.1%). These phenomena are significantly weaker in InAs1−xNx due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs1−xNx the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths (lφ∼100 nm at 2 K) and electron mobilities (μ=6×103 cm2 V−1 s−1 at 300 K) that remain relatively large even at x=1%.

U2 - 10.1103/PhysRevB.80.115207

DO - 10.1103/PhysRevB.80.115207

M3 - Journal article

VL - 80

SP - 115207

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 11

ER -