Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.
AU - Patane, A
AU - Feu, W. H. M.
AU - Makarovsky, O.
AU - Drachenko, O.
AU - Eaves, L.
AU - Krier, Anthony
AU - Zhuang, Qian D.
AU - Helm, M.
AU - Goiran, M.
AU - Hill, G.
PY - 2009/9/16
Y1 - 2009/9/16
N2 - We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of n-type InAs1−xNx epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs1−xNx. In GaAs1−xNx electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x (∼0.1%). These phenomena are significantly weaker in InAs1−xNx due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs1−xNx the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths (lφ∼100 nm at 2 K) and electron mobilities (μ=6×103 cm2 V−1 s−1 at 300 K) that remain relatively large even at x=1%.
AB - We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of n-type InAs1−xNx epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs1−xNx. In GaAs1−xNx electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x (∼0.1%). These phenomena are significantly weaker in InAs1−xNx due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs1−xNx the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths (lφ∼100 nm at 2 K) and electron mobilities (μ=6×103 cm2 V−1 s−1 at 300 K) that remain relatively large even at x=1%.
U2 - 10.1103/PhysRevB.80.115207
DO - 10.1103/PhysRevB.80.115207
M3 - Journal article
VL - 80
SP - 115207
JO - Physical review B
JF - Physical review B
SN - 1550-235X
IS - 11
ER -