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Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

Research output: Contribution to journalJournal article

Published

  • Qiandong Zhuang
  • J. M. Li
  • X. X. Wang
  • Y. P. Zeng
  • Y. T. Wang
  • B. Q. Wang
  • L. Pan
  • J. Wu
  • M.Y. Kong
  • L. Y. Lin
Journal publication date2000
JournalJournal of Crystal Growth
Journal number1-4
Volume208
Number of pages4
Pages791-794
Original languageEnglish

Abstract

Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950°C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750°C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice.