Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films
AU - Danos, Lefteris
AU - Greef, Robert
AU - Markvart, Tomas
PY - 2008/8/30
Y1 - 2008/8/30
N2 - The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100 > and <111 >). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semi conductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor. (c) 2007 Elsevier B.V. All rights reserved.
AB - The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100 > and <111 >). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semi conductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor. (c) 2007 Elsevier B.V. All rights reserved.
KW - SURFACE
KW - SEMICONDUCTOR
KW - fluorescence
KW - DISTANCE DEPENDENCE
KW - INTERFACES
KW - solar cells
KW - energy transfer
KW - STEARATE
KW - Langmuir-Blodgett films
KW - ELECTRONIC-ENERGY TRANSFER
KW - MODE
KW - silicon
U2 - 10.1016/j.tsf.2007.12.103
DO - 10.1016/j.tsf.2007.12.103
M3 - Journal article
VL - 516
SP - 7251
EP - 7255
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 20
T2 - Symposium on Advanced Materials and Concepts for Photovoltaics held at the EMRS 2007Conferenc
Y2 - 1 June 2007
ER -