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Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films

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Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films. / Danos, Lefteris; Greef, Robert; Markvart, Tomas.
In: Thin Solid Films, Vol. 516, No. 20, 30.08.2008, p. 7251-7255.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Danos, L, Greef, R & Markvart, T 2008, 'Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films', Thin Solid Films, vol. 516, no. 20, pp. 7251-7255. https://doi.org/10.1016/j.tsf.2007.12.103

APA

Danos, L., Greef, R., & Markvart, T. (2008). Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films. Thin Solid Films, 516(20), 7251-7255. https://doi.org/10.1016/j.tsf.2007.12.103

Vancouver

Danos L, Greef R, Markvart T. Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films. Thin Solid Films. 2008 Aug 30;516(20):7251-7255. doi: 10.1016/j.tsf.2007.12.103

Author

Danos, Lefteris ; Greef, Robert ; Markvart, Tomas. / Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films. In: Thin Solid Films. 2008 ; Vol. 516, No. 20. pp. 7251-7255.

Bibtex

@article{111250283b8445848748e268835d53b6,
title = "Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films",
abstract = "The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100 > and <111 >). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semi conductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor. (c) 2007 Elsevier B.V. All rights reserved.",
keywords = "SURFACE, SEMICONDUCTOR, fluorescence, DISTANCE DEPENDENCE, INTERFACES, solar cells, energy transfer, STEARATE, Langmuir-Blodgett films, ELECTRONIC-ENERGY TRANSFER, MODE, silicon",
author = "Lefteris Danos and Robert Greef and Tomas Markvart",
year = "2008",
month = aug,
day = "30",
doi = "10.1016/j.tsf.2007.12.103",
language = "English",
volume = "516",
pages = "7251--7255",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "20",
note = "Symposium on Advanced Materials and Concepts for Photovoltaics held at the EMRS 2007Conferenc ; Conference date: 01-06-2007",

}

RIS

TY - JOUR

T1 - Efficient fluorescence quenching near crystalline silicon from Langmuir-Blodgett dye films

AU - Danos, Lefteris

AU - Greef, Robert

AU - Markvart, Tomas

PY - 2008/8/30

Y1 - 2008/8/30

N2 - The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100 > and <111 >). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semi conductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor. (c) 2007 Elsevier B.V. All rights reserved.

AB - The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100 > and <111 >). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semi conductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor. (c) 2007 Elsevier B.V. All rights reserved.

KW - SURFACE

KW - SEMICONDUCTOR

KW - fluorescence

KW - DISTANCE DEPENDENCE

KW - INTERFACES

KW - solar cells

KW - energy transfer

KW - STEARATE

KW - Langmuir-Blodgett films

KW - ELECTRONIC-ENERGY TRANSFER

KW - MODE

KW - silicon

U2 - 10.1016/j.tsf.2007.12.103

DO - 10.1016/j.tsf.2007.12.103

M3 - Journal article

VL - 516

SP - 7251

EP - 7255

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 20

T2 - Symposium on Advanced Materials and Concepts for Photovoltaics held at the EMRS 2007Conferenc

Y2 - 1 June 2007

ER -