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Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

Research output: Contribution in Book/Report/ProceedingsPaper

Published

Publication date2002
Host publicationPhysics and Simulation of Optoelectronic Devices X
EditorsPeter Blood, Marek Osinski, Yasuhiko Arakawa
Place of publicationBellingham, Wash.
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Pages70-78
Number of pages9
ISBN (Print)0-8194-4385-9, 9780819443854
Original languageEnglish

Conference

ConferenceConference on Physics and Simulation of Optoelectronic Devices X
CitySAN JOSE
Period21/01/0225/01/02

Conference

ConferenceConference on Physics and Simulation of Optoelectronic Devices X
CitySAN JOSE
Period21/01/0225/01/02

Abstract

Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.