Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
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TY - GEN
T1 - Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy
AU - Krier, A
AU - Huang, X L
PY - 2002
Y1 - 2002
N2 - Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.
AB - Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.
U2 - 10.1117/12.470576
DO - 10.1117/12.470576
M3 - Conference contribution/Paper
SN - 0-8194-4385-9
SN - 9780819443854
SP - 70
EP - 78
BT - Physics and Simulation of Optoelectronic Devices X
A2 - Blood, Peter
A2 - Osinski, Marek
A2 - Arakawa, Yasuhiko
PB - SPIE-INT SOC OPTICAL ENGINEERING
CY - Bellingham, Wash.
T2 - Conference on Physics and Simulation of Optoelectronic Devices X
Y2 - 21 January 2002 through 25 January 2002
ER -