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Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

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Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. / Krier, A ; Huang, X L .
Physics and Simulation of Optoelectronic Devices X. ed. / Peter Blood; Marek Osinski; Yasuhiko Arakawa. Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, 2002. p. 70-78.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Krier, A & Huang, XL 2002, Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. in P Blood, M Osinski & Y Arakawa (eds), Physics and Simulation of Optoelectronic Devices X. SPIE-INT SOC OPTICAL ENGINEERING, Bellingham, Wash., pp. 70-78, Conference on Physics and Simulation of Optoelectronic Devices X, SAN JOSE, 21/01/02. https://doi.org/10.1117/12.470576

APA

Krier, A., & Huang, X. L. (2002). Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In P. Blood, M. Osinski, & Y. Arakawa (Eds.), Physics and Simulation of Optoelectronic Devices X (pp. 70-78). SPIE-INT SOC OPTICAL ENGINEERING. https://doi.org/10.1117/12.470576

Vancouver

Krier A, Huang XL. Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In Blood P, Osinski M, Arakawa Y, editors, Physics and Simulation of Optoelectronic Devices X. Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING. 2002. p. 70-78 doi: 10.1117/12.470576

Author

Krier, A ; Huang, X L . / Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. Physics and Simulation of Optoelectronic Devices X. editor / Peter Blood ; Marek Osinski ; Yasuhiko Arakawa. Bellingham, Wash. : SPIE-INT SOC OPTICAL ENGINEERING, 2002. pp. 70-78

Bibtex

@inproceedings{853e1cbc3ebb48159f5571a3764e8f90,
title = "Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy",
abstract = "Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.",
author = "A Krier and Huang, {X L}",
year = "2002",
doi = "10.1117/12.470576",
language = "English",
isbn = "0-8194-4385-9",
pages = "70--78",
editor = "Peter Blood and Marek Osinski and Yasuhiko Arakawa",
booktitle = "Physics and Simulation of Optoelectronic Devices X",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "Conference on Physics and Simulation of Optoelectronic Devices X ; Conference date: 21-01-2002 Through 25-01-2002",

}

RIS

TY - GEN

T1 - Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

AU - Krier, A

AU - Huang, X L

PY - 2002

Y1 - 2002

N2 - Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.

AB - Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.

U2 - 10.1117/12.470576

DO - 10.1117/12.470576

M3 - Conference contribution/Paper

SN - 0-8194-4385-9

SN - 9780819443854

SP - 70

EP - 78

BT - Physics and Simulation of Optoelectronic Devices X

A2 - Blood, Peter

A2 - Osinski, Marek

A2 - Arakawa, Yasuhiko

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - Bellingham, Wash.

T2 - Conference on Physics and Simulation of Optoelectronic Devices X

Y2 - 21 January 2002 through 25 January 2002

ER -