We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Electron coherence length and mobility in highl...
View graph of relations

« Back

Electron coherence length and mobility in highly mismatched III-N-V alloys.

Research output: Contribution to journalJournal article


Associated organisational unit

<mark>Journal publication date</mark>23/12/2008
<mark>Journal</mark>Applied Physics Letters
<mark>Original language</mark>English


We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. ©2008 American Institute of Physics

Bibliographic note

Article number: 252106