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Electron coherence length and mobility in highly mismatched III-N-V alloys.

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<mark>Journal publication date</mark>23/12/2008
<mark>Journal</mark>Applied Physics Letters
Issue number25
Volume93
Pages (from-to)252106
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. ©2008 American Institute of Physics

Bibliographic note

Article number: 252106