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Electron coherence length and mobility in highly mismatched III-N-V alloys.

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Electron coherence length and mobility in highly mismatched III-N-V alloys. / Patane, A.; Allison, G.; Eaves, L. et al.
In: Applied Physics Letters, Vol. 93, No. 25, 23.12.2008, p. 252106.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Patane, A, Allison, G, Eaves, L, Kozlova, NV, Zhuang, QD, Krier, A, Hopkinson, M & Hill, G 2008, 'Electron coherence length and mobility in highly mismatched III-N-V alloys.', Applied Physics Letters, vol. 93, no. 25, pp. 252106. https://doi.org/10.1063/1.3056120

APA

Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M., & Hill, G. (2008). Electron coherence length and mobility in highly mismatched III-N-V alloys. Applied Physics Letters, 93(25), 252106. https://doi.org/10.1063/1.3056120

Vancouver

Patane A, Allison G, Eaves L, Kozlova NV, Zhuang QD, Krier A et al. Electron coherence length and mobility in highly mismatched III-N-V alloys. Applied Physics Letters. 2008 Dec 23;93(25):252106. doi: 10.1063/1.3056120

Author

Patane, A. ; Allison, G. ; Eaves, L. et al. / Electron coherence length and mobility in highly mismatched III-N-V alloys. In: Applied Physics Letters. 2008 ; Vol. 93, No. 25. pp. 252106.

Bibtex

@article{914291596dad4001ae1b178548ead6ec,
title = "Electron coherence length and mobility in highly mismatched III-N-V alloys.",
abstract = "We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. {\textcopyright}2008 American Institute of Physics",
author = "A. Patane and G. Allison and L. Eaves and Kozlova, {N. V.} and Zhuang, {Q. D.} and A. Krier and M. Hopkinson and G. Hill",
note = "Article number: 252106",
year = "2008",
month = dec,
day = "23",
doi = "10.1063/1.3056120",
language = "English",
volume = "93",
pages = "252106",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "25",

}

RIS

TY - JOUR

T1 - Electron coherence length and mobility in highly mismatched III-N-V alloys.

AU - Patane, A.

AU - Allison, G.

AU - Eaves, L.

AU - Kozlova, N. V.

AU - Zhuang, Q. D.

AU - Krier, A.

AU - Hopkinson, M.

AU - Hill, G.

N1 - Article number: 252106

PY - 2008/12/23

Y1 - 2008/12/23

N2 - We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. ©2008 American Institute of Physics

AB - We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. ©2008 American Institute of Physics

U2 - 10.1063/1.3056120

DO - 10.1063/1.3056120

M3 - Journal article

VL - 93

SP - 252106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 25

ER -