We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Electron spin coherence and electron nuclear do...
View graph of relations

« Back

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Research output: Contribution to journalJournal article


  • Richard George
  • Wayne Witzel
  • H. Riemann
  • N. V. Abrosimov
  • N. Nötzel
  • Mike Thewalt
  • John Morton
Article number067601
Journal publication date6/08/2010
JournalPhysical Review Letters
Number of pages4
Original languageEnglish


Donors in silicon hold considerable promise for emerging quantum technologies, due to their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more widely studied group V donors, such as phosphorous, in several significant respects: They have the strongest binding energy (70.98 meV), a large nuclear spin (I=9/2), and a strong hyperfine coupling constant (A=1475.4  MHz). These larger energy scales allow us to perform a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin decoherence of P donors in natural silicon. We report the electron-nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.

Bibliographic note

© 2010 The American Physical Society