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Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

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  • T. J. Badcock
  • M. Hayne
  • M. Hopkinson
  • W Jantsch
  • H. Y. Liu
  • V V Moshchalkov
  • D. J. Mowbray
  • E. Nabavi
  • T. Nuytten
  • F Schaffler
  • M. J. Steer
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Abstract

It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.