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Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

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Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. / Badcock, T. J.; Hayne, M.; Hopkinson, M. et al.
Physics of Semiconductors, Pts A and B. Vol. 893 American Institute of Physics, 2007. p. 951-952.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

Harvard

Badcock, TJ, Hayne, M, Hopkinson, M, Jantsch, W, Liu, HY, Moshchalkov, VV, Mowbray, DJ, Nabavi, E, Nuytten, T, Schaffler, F & Steer, MJ 2007, Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. in Physics of Semiconductors, Pts A and B. vol. 893, American Institute of Physics, pp. 951-952. https://doi.org/10.1063/1.2730208

APA

Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F., & Steer, M. J. (2007). Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. In Physics of Semiconductors, Pts A and B (Vol. 893, pp. 951-952). American Institute of Physics. https://doi.org/10.1063/1.2730208

Vancouver

Badcock TJ, Hayne M, Hopkinson M, Jantsch W, Liu HY, Moshchalkov VV et al. Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. In Physics of Semiconductors, Pts A and B. Vol. 893. American Institute of Physics. 2007. p. 951-952 doi: 10.1063/1.2730208

Author

Badcock, T. J. ; Hayne, M. ; Hopkinson, M. et al. / Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. Physics of Semiconductors, Pts A and B. Vol. 893 American Institute of Physics, 2007. pp. 951-952

Bibtex

@inbook{fd989c41fe2745a2b3dc0ed4ebc3ab8f,
title = "Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots",
abstract = "It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.",
author = "Badcock, {T. J.} and M. Hayne and M. Hopkinson and W Jantsch and Liu, {H. Y.} and Moshchalkov, {V V} and Mowbray, {D. J.} and E. Nabavi and T. Nuytten and F Schaffler and Steer, {M. J.}",
year = "2007",
month = apr,
day = "10",
doi = "10.1063/1.2730208",
language = "English",
isbn = "9780735403970",
volume = "893",
pages = "951--952",
booktitle = "Physics of Semiconductors, Pts A and B",
publisher = "American Institute of Physics",

}

RIS

TY - CHAP

T1 - Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

AU - Badcock, T. J.

AU - Hayne, M.

AU - Hopkinson, M.

AU - Jantsch, W

AU - Liu, H. Y.

AU - Moshchalkov, V V

AU - Mowbray, D. J.

AU - Nabavi, E.

AU - Nuytten, T.

AU - Schaffler, F

AU - Steer, M. J.

PY - 2007/4/10

Y1 - 2007/4/10

N2 - It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.

AB - It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.

U2 - 10.1063/1.2730208

DO - 10.1063/1.2730208

M3 - Chapter

SN - 9780735403970

VL - 893

SP - 951

EP - 952

BT - Physics of Semiconductors, Pts A and B

PB - American Institute of Physics

ER -