Final published version
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
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TY - CHAP
T1 - Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots
AU - Badcock, T. J.
AU - Hayne, M.
AU - Hopkinson, M.
AU - Jantsch, W
AU - Liu, H. Y.
AU - Moshchalkov, V V
AU - Mowbray, D. J.
AU - Nabavi, E.
AU - Nuytten, T.
AU - Schaffler, F
AU - Steer, M. J.
PY - 2007/4/10
Y1 - 2007/4/10
N2 - It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.
AB - It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.
U2 - 10.1063/1.2730208
DO - 10.1063/1.2730208
M3 - Chapter
SN - 9780735403970
VL - 893
SP - 951
EP - 952
BT - Physics of Semiconductors, Pts A and B
PB - American Institute of Physics
ER -