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Energy level diagram of X- in high magnetic fields

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Energy level diagram of X- in high magnetic fields. / Vanhoucke, T.; Hayne, M.; Moshchalkov, V. V. et al.
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. ed. / ZH. Alferov; L. Esaki. 2000. p. 252-255 (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Vanhoucke, T, Hayne, M, Moshchalkov, VV & Henini, M 2000, Energy level diagram of X- in high magnetic fields. in ZH Alferov & L Esaki (eds), Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, pp. 252-255, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, St. Petersburg, Russian Federation, 19/06/00. <https://apps.dtic.mil/dtic/tr/fulltext/u2/p013069.pdf>

APA

Vanhoucke, T., Hayne, M., Moshchalkov, V. V., & Henini, M. (2000). Energy level diagram of X- in high magnetic fields. In ZH. Alferov, & L. Esaki (Eds.), Proceedings of the 8th International Symposium Nanostructures: Physics and Technology (pp. 252-255). (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology). https://apps.dtic.mil/dtic/tr/fulltext/u2/p013069.pdf

Vancouver

Vanhoucke T, Hayne M, Moshchalkov VV, Henini M. Energy level diagram of X- in high magnetic fields. In Alferov ZH, Esaki L, editors, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. 2000. p. 252-255. (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

Author

Vanhoucke, T. ; Hayne, M. ; Moshchalkov, V. V. et al. / Energy level diagram of X- in high magnetic fields. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. editor / ZH. Alferov ; L. Esaki. 2000. pp. 252-255 (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

Bibtex

@inproceedings{8a3610531b9346c29738bd63afb6f030,
title = "Energy level diagram of X- in high magnetic fields",
abstract = "The photoluminescence energy of the negatively charged excitons (X-) in a 100 {\AA} GaAs/AlGaAs quantum well (QW) using magnetic fields upto 50 T was analysed. The QW structures were grown by molecular beam epitaxy. It was found that all possible transitions of the singlet and triplet state of the X- can be determined and the energy level diagram of X- can be constructed.",
author = "T. Vanhoucke and M. Hayne and Moshchalkov, {V. V.} and M. Henini",
year = "2000",
month = dec,
day = "1",
language = "English",
isbn = "5936340023",
series = "Proceedings of the 8th International Symposium Nanostructures: Physics and Technology",
pages = "252--255",
editor = "ZH. Alferov and L. Esaki",
booktitle = "Proceedings of the 8th International Symposium Nanostructures",
note = "Proceedings of the 8th International Symposium Nanostructures: Physics and Technology ; Conference date: 19-06-2000 Through 23-06-2000",

}

RIS

TY - GEN

T1 - Energy level diagram of X- in high magnetic fields

AU - Vanhoucke, T.

AU - Hayne, M.

AU - Moshchalkov, V. V.

AU - Henini, M.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The photoluminescence energy of the negatively charged excitons (X-) in a 100 Å GaAs/AlGaAs quantum well (QW) using magnetic fields upto 50 T was analysed. The QW structures were grown by molecular beam epitaxy. It was found that all possible transitions of the singlet and triplet state of the X- can be determined and the energy level diagram of X- can be constructed.

AB - The photoluminescence energy of the negatively charged excitons (X-) in a 100 Å GaAs/AlGaAs quantum well (QW) using magnetic fields upto 50 T was analysed. The QW structures were grown by molecular beam epitaxy. It was found that all possible transitions of the singlet and triplet state of the X- can be determined and the energy level diagram of X- can be constructed.

M3 - Conference contribution/Paper

AN - SCOPUS:0034594289

SN - 5936340023

T3 - Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

SP - 252

EP - 255

BT - Proceedings of the 8th International Symposium Nanostructures

A2 - Alferov, ZH.

A2 - Esaki, L.

T2 - Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

Y2 - 19 June 2000 through 23 June 2000

ER -