We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Environment-Assisted Tunneling as an Origin of ...
View graph of relations

« Back

Environment-Assisted Tunneling as an Origin of the Dynes Density of States

Research output: Contribution to journalJournal article


  • J. P. Pekola
  • V. F. Maisi
  • S. Kafanov
  • N. Chekurov
  • A. Kemppinen
  • Yuri Pashkin
  • O. -P. Saira
  • M. Mottonen
  • J. S. Tsai
Article number026803
Journal publication date6/07/2010
JournalPhysical review letters
Number of pages4
Original languageEnglish


We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.