Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 102514 |
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<mark>Journal publication date</mark> | 8/03/2010 |
<mark>Journal</mark> | Applied Physics Letters |
Issue number | 10 |
Volume | 96 |
Number of pages | 3 |
Publication Status | Published |
<mark>Original language</mark> | English |
We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]