We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Estimating the spin diffusion length of semicon...
View graph of relations

« Back

Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

Research output: Contribution to journalJournal article


  • A. M. H. R. Hakimi
  • N. Banerjee
  • A. Aziz
  • J. W. A. Robinson
  • M. G. Blamire
Article number102514
Journal publication date8/03/2010
JournalApplied Physics Letters
Number of pages3
Original languageEnglish


We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]