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  • Hayne PRB 46 9515 1992

    Rights statement: © 1992 The American Physical Society

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    25/05/12

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Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

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<mark>Journal publication date</mark>15/10/1992
<mark>Journal</mark>Physical Review B
Issue number15
Volume46
Number of pages5
Pages (from-to)9515-9519
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

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© 1992 The American Physical Society