Rights statement: © 1992 The American Physical Society
Final published version, 434 KB, PDF document
Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 15/10/1992 |
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<mark>Journal</mark> | Physical review B |
Issue number | 15 |
Volume | 46 |
Number of pages | 5 |
Pages (from-to) | 9515-9519 |
Publication Status | Published |
<mark>Original language</mark> | English |
Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.