12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Exchange enhancement of the Landau-level separa...
View graph of relations

« Back

Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

Research output: Contribution to journalJournal article

Published

Journal publication date15/10/1992
JournalPhysical Review B
Journal number15
Volume46
Number of pages5
Pages9515-9519
Original languageEnglish

Abstract

Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

Bibliographic note

© 1992 The American Physical Society