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Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

Research output: Contribution to journalJournal article


Journal publication date15/10/1992
JournalPhysical Review B
Number of pages5
Original languageEnglish


Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

Bibliographic note

© 1992 The American Physical Society