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Home > Research > Publications & Outputs > Fast Hybrid Silicon Double-Quantum-Dot Qubit
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Fast Hybrid Silicon Double-Quantum-Dot Qubit

Research output: Contribution to journalJournal article

Published

  • Zhan Shi
  • C. B. Simmons
  • J. R. Prance
  • John King Gamble
  • Teck Seng Koh
  • Yun-Pil Shim
  • Xuedong Hu
  • D. E. Savage
  • M. G. Lagally
  • M. A. Eriksson
  • Mark Friesen
  • S. N. Coppersmith
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Journal publication date4/04/2012
JournalPhysical review letters
Journal number14
Volume108
Number of pages5
Pages-
Original languageEnglish

Abstract

We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers S-2 = 3/4 (S = 1/2) and S-z = -1/2, with the two different states being singlet and triplet in the doubly occupied dot. Gate operations can be implemented electrically and the qubit is highly tunable, enabling fast implementation of one-and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantum dot qubit architectures with fast operations. Moreover, the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.