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Field-effect tunneling transistor based on vertical graphene heterostructures

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Field-effect tunneling transistor based on vertical graphene heterostructures. / Britnell, L.; Gorbachev, R. V.; Jalil, R. et al.
In: Science, Vol. 335, No. 6071, 24.02.2012, p. 947-950.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Britnell, L, Gorbachev, RV, Jalil, R, Belle, BD, Schedin, F, Mishchenko, A, Georgiou, T, Katsnelson, MI, Eaves, L, Morozov, SV, Peres, NMR, Leist, J, Geim, AK, Novoselov, KS & Ponomarenko, LA 2012, 'Field-effect tunneling transistor based on vertical graphene heterostructures', Science, vol. 335, no. 6071, pp. 947-950. https://doi.org/10.1126/science.1218461

APA

Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., & Ponomarenko, L. A. (2012). Field-effect tunneling transistor based on vertical graphene heterostructures. Science, 335(6071), 947-950. https://doi.org/10.1126/science.1218461

Vancouver

Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Mishchenko A et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science. 2012 Feb 24;335(6071):947-950. doi: 10.1126/science.1218461

Author

Britnell, L. ; Gorbachev, R. V. ; Jalil, R. et al. / Field-effect tunneling transistor based on vertical graphene heterostructures. In: Science. 2012 ; Vol. 335, No. 6071. pp. 947-950.

Bibtex

@article{f50893e83f22481d8342391bb002e320,
title = "Field-effect tunneling transistor based on vertical graphene heterostructures",
abstract = "An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.",
author = "L. Britnell and Gorbachev, {R. V.} and R. Jalil and Belle, {B. D.} and F. Schedin and A. Mishchenko and T. Georgiou and Katsnelson, {M. I.} and L. Eaves and Morozov, {S. V.} and Peres, {N. M. R.} and J. Leist and Geim, {A. K.} and Novoselov, {K. S.} and Ponomarenko, {L. A.}",
year = "2012",
month = feb,
day = "24",
doi = "10.1126/science.1218461",
language = "English",
volume = "335",
pages = "947--950",
journal = "Science",
issn = "0036-8075",
publisher = "American Association for the Advancement of Science",
number = "6071",

}

RIS

TY - JOUR

T1 - Field-effect tunneling transistor based on vertical graphene heterostructures

AU - Britnell, L.

AU - Gorbachev, R. V.

AU - Jalil, R.

AU - Belle, B. D.

AU - Schedin, F.

AU - Mishchenko, A.

AU - Georgiou, T.

AU - Katsnelson, M. I.

AU - Eaves, L.

AU - Morozov, S. V.

AU - Peres, N. M. R.

AU - Leist, J.

AU - Geim, A. K.

AU - Novoselov, K. S.

AU - Ponomarenko, L. A.

PY - 2012/2/24

Y1 - 2012/2/24

N2 - An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

AB - An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

UR - http://www.scopus.com/inward/record.url?scp=84857567921&partnerID=8YFLogxK

U2 - 10.1126/science.1218461

DO - 10.1126/science.1218461

M3 - Journal article

VL - 335

SP - 947

EP - 950

JO - Science

JF - Science

SN - 0036-8075

IS - 6071

ER -