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Filling-factor-dependent mangetophonon resonance in graphene.

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<mark>Journal publication date</mark>23/08/2007
<mark>Journal</mark>Physical review letters
Issue number8
Volume99
Pages (from-to)087402 1-4
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We describe a peculiar fine structure acquired by the in-plane optical phonon at the point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0+, 1 and -,10, at a magnetic field B030 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations.

Bibliographic note

We predicted a peculiar fine structure acquired by the in-plane optical phonon in monolayer graphene (G band in its Raman spectrum) when it is brought into resonance with the lowest inter-Landau-level transition in this material. This effect can be used for a direct measurement of the electron-phonon coupling strength. RAE_import_type : Journal article RAE_uoa_type : Physics