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  • photonics-02-00414

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Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

Research output: Contribution to journalJournal article

Published
<mark>Journal publication date</mark>15/04/2015
<mark>Journal</mark>Photonics
Issue number2
Volume2
Number of pages12
Pages (from-to)414-425
Publication statusPublished
Original languageEnglish

Abstract

In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 μm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.