12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > GaInAsPSb/GaSb heterostructures for mid-infrare...
View graph of relations

« Back

GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

Research output: Contribution to journalJournal article

Published

Journal publication date04/2007
Journalphysica status solidi (a)
Journal number4
Volume204
Number of pages4
Pages1047-1050
Original languageEnglish

Abstract

GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.