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GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>04/2007
<mark>Journal</mark>physica status solidi (a)
Issue number4
Number of pages4
Pages (from-to)1047-1050
<mark>Original language</mark>English


GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.