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GaSb/GaAs nanostructures for charge-based memory

Research output: Contribution to conference - Without ISBN/ISSN Poster

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GaSb/GaAs nanostructures for charge-based memory. / Young, Robert.

2011. Poster session presented at EP2DS 19/MSS 15, Tallahassee, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN Poster

Harvard

Young, R 2011, 'GaSb/GaAs nanostructures for charge-based memory', EP2DS 19/MSS 15, Tallahassee, United Kingdom, 25/07/11.

APA

Young, R. (2011). GaSb/GaAs nanostructures for charge-based memory. Poster session presented at EP2DS 19/MSS 15, Tallahassee, United Kingdom.

Vancouver

Young R. GaSb/GaAs nanostructures for charge-based memory. 2011. Poster session presented at EP2DS 19/MSS 15, Tallahassee, United Kingdom.

Author

Young, Robert. / GaSb/GaAs nanostructures for charge-based memory. Poster session presented at EP2DS 19/MSS 15, Tallahassee, United Kingdom.

Bibtex

@conference{1d17648c129e4ce3a699999e63308fb3,
title = "GaSb/GaAs nanostructures for charge-based memory",
abstract = "The interaction between nano-scale objects of different dimensionality, e.g. electrostatic Coulomb-coupled zero-dimensional quantum dots (QD{\textquoteright}s) to two-dimensional (2D) systems, is both of fundamental interest and great relevance for the future of memory technology. GaSb/(Al)GaAs quantum dots provide strong hole-confinement, with potential to provide storage times of many years at room temperature [1]. ",
author = "Robert Young",
year = "2011",
month = jul
day = "25",
language = "English",
note = "EP2DS 19/MSS 15 ; Conference date: 25-07-2011",

}

RIS

TY - CONF

T1 - GaSb/GaAs nanostructures for charge-based memory

AU - Young, Robert

PY - 2011/7/25

Y1 - 2011/7/25

N2 - The interaction between nano-scale objects of different dimensionality, e.g. electrostatic Coulomb-coupled zero-dimensional quantum dots (QD’s) to two-dimensional (2D) systems, is both of fundamental interest and great relevance for the future of memory technology. GaSb/(Al)GaAs quantum dots provide strong hole-confinement, with potential to provide storage times of many years at room temperature [1].

AB - The interaction between nano-scale objects of different dimensionality, e.g. electrostatic Coulomb-coupled zero-dimensional quantum dots (QD’s) to two-dimensional (2D) systems, is both of fundamental interest and great relevance for the future of memory technology. GaSb/(Al)GaAs quantum dots provide strong hole-confinement, with potential to provide storage times of many years at room temperature [1].

M3 - Poster

T2 - EP2DS 19/MSS 15

Y2 - 25 July 2011

ER -