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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. / Smakman, E. P.; Garleff, J. K.; Young, R. J.; Hayne, M.; Rambabu, P.; Koenraad, P. M.

In: Applied Physics Letters, Vol. 100, No. 14, 142116, 02.04.2012, p. -.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Smakman, EP, Garleff, JK, Young, RJ, Hayne, M, Rambabu, P & Koenraad, PM 2012, 'GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy', Applied Physics Letters, vol. 100, no. 14, 142116, pp. -. https://doi.org/10.1063/1.3701614

APA

Smakman, E. P., Garleff, J. K., Young, R. J., Hayne, M., Rambabu, P., & Koenraad, P. M. (2012). GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Applied Physics Letters, 100(14), -. [142116]. https://doi.org/10.1063/1.3701614

Vancouver

Smakman EP, Garleff JK, Young RJ, Hayne M, Rambabu P, Koenraad PM. GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Applied Physics Letters. 2012 Apr 2;100(14):-. 142116. https://doi.org/10.1063/1.3701614

Author

Smakman, E. P. ; Garleff, J. K. ; Young, R. J. ; Hayne, M. ; Rambabu, P. ; Koenraad, P. M. / GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. In: Applied Physics Letters. 2012 ; Vol. 100, No. 14. pp. -.

Bibtex

@article{6bad471e343c4ce395769653b4c943ae,
title = "GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy",
abstract = "We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701614]",
author = "Smakman, {E. P.} and Garleff, {J. K.} and Young, {R. J.} and M. Hayne and P. Rambabu and Koenraad, {P. M.}",
note = "{\textcopyright} 2012 American Institute of Physics",
year = "2012",
month = apr,
day = "2",
doi = "10.1063/1.3701614",
language = "English",
volume = "100",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "14",

}

RIS

TY - JOUR

T1 - GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

AU - Smakman, E. P.

AU - Garleff, J. K.

AU - Young, R. J.

AU - Hayne, M.

AU - Rambabu, P.

AU - Koenraad, P. M.

N1 - © 2012 American Institute of Physics

PY - 2012/4/2

Y1 - 2012/4/2

N2 - We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701614]

AB - We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701614]

U2 - 10.1063/1.3701614

DO - 10.1063/1.3701614

M3 - Journal article

VL - 100

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142116

ER -