Rights statement: © 2012 American Institute of Physics
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
AU - Smakman, E. P.
AU - Garleff, J. K.
AU - Young, R. J.
AU - Hayne, M.
AU - Rambabu, P.
AU - Koenraad, P. M.
N1 - © 2012 American Institute of Physics
PY - 2012/4/2
Y1 - 2012/4/2
N2 - We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701614]
AB - We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701614]
U2 - 10.1063/1.3701614
DO - 10.1063/1.3701614
M3 - Journal article
VL - 100
SP - -
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142116
ER -