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Gate-defined quantum confinement in InSe-based Van der Waals heterostructures

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<mark>Journal publication date</mark>15/05/2018
<mark>Journal</mark>Nano Letters
Issue number6
Volume18
Number of pages3955
Pages (from-to)3950
Publication statusPublished
Original languageEnglish

Abstract

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Bibliographic note

This document is the Accepted Manuscript version of a Published Work that appeared in final form in [Journal Title], copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.8b01376