Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene.
AU - Koshino, Mikito
AU - McCann, Edward
PY - 2009/3/15
Y1 - 2009/3/15
N2 - We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central layer and hybridizes the linear and parabolic low-energy bands, leaving a chiral Hamiltonian essentially different from that of monolayer or bilayer graphene. Using the self-consistent Born approximation, we find that the density of states and the minimal conductivity in the presence of disorder generally increase as the gate field increases, in sharp contrast with bilayer graphene.
AB - We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central layer and hybridizes the linear and parabolic low-energy bands, leaving a chiral Hamiltonian essentially different from that of monolayer or bilayer graphene. Using the self-consistent Born approximation, we find that the density of states and the minimal conductivity in the presence of disorder generally increase as the gate field increases, in sharp contrast with bilayer graphene.
KW - band structure
KW - electrical conductivity
KW - graphene
KW - SCF calculations
UR - http://www.scopus.com/inward/record.url?scp=65549120579&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.125443
DO - 10.1103/PhysRevB.79.125443
M3 - Journal article
VL - 79
SP - 125443
JO - Physical review B
JF - Physical review B
SN - 1550-235X
IS - 12
ER -