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Generation of propagation-invariant light beams from semiconductor light sources

Research output: Contribution to journalJournal article

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  • G. S. Sokolovskii
  • V. V. Dudelev
  • S. N. Losev
  • Svetlana Zolotovskaya
  • A. G. Deryagin
  • V. I. Kuchinskii
  • E.U. Rafailov
  • W. Sibbett
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<mark>Journal publication date</mark>12/2008
<mark>Journal</mark>Technical Physics Letters
Issue number12
Volume34
Number of pages4
Pages (from-to)1075-1078
Publication statusPublished
Early online date23/12/08
Original languageEnglish

Abstract

We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.