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Generation of propagation-invariant light beams from semiconductor light sources

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Generation of propagation-invariant light beams from semiconductor light sources. / Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N. et al.
In: Technical Physics Letters, Vol. 34, No. 12, 12.2008, p. 1075-1078.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Sokolovskii, GS, Dudelev, VV, Losev, SN, Zolotovskaya, S, Deryagin, AG, Kuchinskii, VI, Rafailov, EU & Sibbett, W 2008, 'Generation of propagation-invariant light beams from semiconductor light sources', Technical Physics Letters, vol. 34, no. 12, pp. 1075-1078. https://doi.org/10.1134/S1063785008120262

APA

Sokolovskii, G. S., Dudelev, V. V., Losev, S. N., Zolotovskaya, S., Deryagin, A. G., Kuchinskii, V. I., Rafailov, E. U., & Sibbett, W. (2008). Generation of propagation-invariant light beams from semiconductor light sources. Technical Physics Letters, 34(12), 1075-1078. https://doi.org/10.1134/S1063785008120262

Vancouver

Sokolovskii GS, Dudelev VV, Losev SN, Zolotovskaya S, Deryagin AG, Kuchinskii VI et al. Generation of propagation-invariant light beams from semiconductor light sources. Technical Physics Letters. 2008 Dec;34(12):1075-1078. Epub 2008 Dec 23. doi: 10.1134/S1063785008120262

Author

Sokolovskii, G. S. ; Dudelev, V. V. ; Losev, S. N. et al. / Generation of propagation-invariant light beams from semiconductor light sources. In: Technical Physics Letters. 2008 ; Vol. 34, No. 12. pp. 1075-1078.

Bibtex

@article{fad2092f5d8b4416a937fa1b0c373399,
title = "Generation of propagation-invariant light beams from semiconductor light sources",
abstract = "We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.",
author = "Sokolovskii, {G. S.} and Dudelev, {V. V.} and Losev, {S. N.} and Svetlana Zolotovskaya and Deryagin, {A. G.} and Kuchinskii, {V. I.} and E.U. Rafailov and W. Sibbett",
year = "2008",
month = dec,
doi = "10.1134/S1063785008120262",
language = "English",
volume = "34",
pages = "1075--1078",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "12",

}

RIS

TY - JOUR

T1 - Generation of propagation-invariant light beams from semiconductor light sources

AU - Sokolovskii, G. S.

AU - Dudelev, V. V.

AU - Losev, S. N.

AU - Zolotovskaya, Svetlana

AU - Deryagin, A. G.

AU - Kuchinskii, V. I.

AU - Rafailov, E.U.

AU - Sibbett, W.

PY - 2008/12

Y1 - 2008/12

N2 - We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

AB - We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

U2 - 10.1134/S1063785008120262

DO - 10.1134/S1063785008120262

M3 - Journal article

VL - 34

SP - 1075

EP - 1078

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 12

ER -