Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Growth and emission tuning of InAs/InP quantum dots superlattice
AU - Zhuang, Qiandong
AU - Yoon, S. F.
AU - Zheng, H. Q.
PY - 2001
Y1 - 2001
N2 - We report the solid source molecular beam epitaxial growth of InAs/InP quantum dot (QD) superlattices and the effect of As/P exchange on the interface between InAs and InP. The InAs QDs were found to have an average lateral diameter of ∼40 nm and a density of 3–4×109 cm−2. The QDs superlattice has photoluminescence (PL) emission centred at 0.77 eV with a linewidth of 64 meV at low temperature (4 K). X-ray diffraction (XRD) spectra showed evidence of significant As/P exchange on the interface between InAs and InP during in situ annealing under P2 pressure before growing the spacer layer of InP. An average P composition of ∼30% in the resulting InAsP QDs in samples annealed for 50 s was deduced from dynamical simulations of the experimental XRD spectra. The QDs superlattice PL emission exhibits a blueshift following an increase in annealing time, and emission at 1.55 μm and at 300 K was achieved. This observation holds promise for possible telecommunication device applications at long wavelengths.
AB - We report the solid source molecular beam epitaxial growth of InAs/InP quantum dot (QD) superlattices and the effect of As/P exchange on the interface between InAs and InP. The InAs QDs were found to have an average lateral diameter of ∼40 nm and a density of 3–4×109 cm−2. The QDs superlattice has photoluminescence (PL) emission centred at 0.77 eV with a linewidth of 64 meV at low temperature (4 K). X-ray diffraction (XRD) spectra showed evidence of significant As/P exchange on the interface between InAs and InP during in situ annealing under P2 pressure before growing the spacer layer of InP. An average P composition of ∼30% in the resulting InAsP QDs in samples annealed for 50 s was deduced from dynamical simulations of the experimental XRD spectra. The QDs superlattice PL emission exhibits a blueshift following an increase in annealing time, and emission at 1.55 μm and at 300 K was achieved. This observation holds promise for possible telecommunication device applications at long wavelengths.
KW - Quantum dots; Superlattice; As/P exchange; PL emission
M3 - Journal article
VL - 227-228
SP - 1084
EP - 1088
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
T2 - Eleventh International Conference on Molecular Beam Epitaxy, 10-15 October, 2000, Beijing, China.
Y2 - 10 October 2010 through 15 October 2010
ER -