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Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

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Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity. / Dimastrodonato, Valeria; Mereni, Lorenzo O.; Young, Robert J. et al.
In: physica status solidi (b), Vol. 247, No. 8, 08.2010, p. 1862-1866.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Dimastrodonato, V, Mereni, LO, Young, RJ & Pelucchi, E 2010, 'Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity', physica status solidi (b), vol. 247, no. 8, pp. 1862-1866. https://doi.org/10.1002/pssb.200983803

APA

Dimastrodonato, V., Mereni, L. O., Young, R. J., & Pelucchi, E. (2010). Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity. physica status solidi (b), 247(8), 1862-1866. https://doi.org/10.1002/pssb.200983803

Vancouver

Dimastrodonato V, Mereni LO, Young RJ, Pelucchi E. Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity. physica status solidi (b). 2010 Aug;247(8):1862-1866. doi: 10.1002/pssb.200983803

Author

Dimastrodonato, Valeria ; Mereni, Lorenzo O. ; Young, Robert J. et al. / Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity. In: physica status solidi (b). 2010 ; Vol. 247, No. 8. pp. 1862-1866.

Bibtex

@article{00ce4531f1944a2bbbc65cc4d0ec8be2,
title = "Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity",
abstract = "This work presents some fundamental features of pyramidal site-controlled In GaAs Quantum Dots (QDs) grown by metal-organic vapour phase epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation position and the dimensions of the confined structures onto the substrate. The fundamental steps of substrate patterning and the QD formation mechanism are described together with a discussion of the structural particulars. The post-growth processes, including surface etching and substrate removal, which are required to facilitate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.",
author = "Valeria Dimastrodonato and Mereni, {Lorenzo O.} and Young, {Robert J.} and Emanuele Pelucchi",
year = "2010",
month = aug,
doi = "10.1002/pssb.200983803",
language = "English",
volume = "247",
pages = "1862--1866",
journal = "physica status solidi (b)",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "8",

}

RIS

TY - JOUR

T1 - Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

AU - Dimastrodonato, Valeria

AU - Mereni, Lorenzo O.

AU - Young, Robert J.

AU - Pelucchi, Emanuele

PY - 2010/8

Y1 - 2010/8

N2 - This work presents some fundamental features of pyramidal site-controlled In GaAs Quantum Dots (QDs) grown by metal-organic vapour phase epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation position and the dimensions of the confined structures onto the substrate. The fundamental steps of substrate patterning and the QD formation mechanism are described together with a discussion of the structural particulars. The post-growth processes, including surface etching and substrate removal, which are required to facilitate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.

AB - This work presents some fundamental features of pyramidal site-controlled In GaAs Quantum Dots (QDs) grown by metal-organic vapour phase epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation position and the dimensions of the confined structures onto the substrate. The fundamental steps of substrate patterning and the QD formation mechanism are described together with a discussion of the structural particulars. The post-growth processes, including surface etching and substrate removal, which are required to facilitate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.

U2 - 10.1002/pssb.200983803

DO - 10.1002/pssb.200983803

M3 - Journal article

VL - 247

SP - 1862

EP - 1866

JO - physica status solidi (b)

JF - physica status solidi (b)

SN - 0370-1972

IS - 8

ER -