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HEMT-HBT matrix amplifier

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HEMT-HBT matrix amplifier. / Paoloni, C .
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 8, 08.2000, p. 1308-1312.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Paoloni, C 2000, 'HEMT-HBT matrix amplifier', IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 8, pp. 1308-1312. https://doi.org/10.1109/22.859474

APA

Paoloni, C. (2000). HEMT-HBT matrix amplifier. IEEE Transactions on Microwave Theory and Techniques, 48(8), 1308-1312. https://doi.org/10.1109/22.859474

Vancouver

Paoloni C. HEMT-HBT matrix amplifier. IEEE Transactions on Microwave Theory and Techniques. 2000 Aug;48(8):1308-1312. doi: 10.1109/22.859474

Author

Paoloni, C . / HEMT-HBT matrix amplifier. In: IEEE Transactions on Microwave Theory and Techniques. 2000 ; Vol. 48, No. 8. pp. 1308-1312.

Bibtex

@article{58f5f234bd9f45ffa1fbb48dd59e8269,
title = "HEMT-HBT matrix amplifier",
abstract = "A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.",
author = "C Paoloni",
year = "2000",
month = aug,
doi = "10.1109/22.859474",
language = "English",
volume = "48",
pages = "1308--1312",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

RIS

TY - JOUR

T1 - HEMT-HBT matrix amplifier

AU - Paoloni, C

PY - 2000/8

Y1 - 2000/8

N2 - A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.

AB - A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.

U2 - 10.1109/22.859474

DO - 10.1109/22.859474

M3 - Journal article

VL - 48

SP - 1308

EP - 1312

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 8

ER -