Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 08/2000 |
|---|---|
| <mark>Journal</mark> | IEEE Transactions on Microwave Theory and Techniques |
| Issue number | 8 |
| Volume | 48 |
| Number of pages | 5 |
| Pages (from-to) | 1308-1312 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.