Research output: Contribution to Journal/Magazine › Literature review › peer-review
Research output: Contribution to Journal/Magazine › Literature review › peer-review
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TY - JOUR
T1 - High-field magneto-photoluminescence of semiconductor nanostructures
AU - Hayne, Manus
AU - Bansal, Bhavtosh
PY - 2012/5
Y1 - 2012/5
N2 - We review the photoluminescence of semiconductor nanostructures in high magnetic fields, concentrating on the effects of the applied magnetic field on orbital motion (wave function extent), which is probed in experiments on large ensembles. We present an overview of the physics of excitons in high magnetic fields in 3- and 2-D before introducing the zero-dimensional case. We then discuss the physics of quantum-dot excitons in high magnetic fields with particular attention to the approximate analytical models used to interpret experimental results. This is followed by a brief description of a typical high-field magneto-photoluminescence setup. We then present four examples of magneto-photoluminescence experiments on different materials systems chosen from our own research to illustrate how high magnetic fields can be used to reveal new insights into the physics of semiconductor nanostructures.
AB - We review the photoluminescence of semiconductor nanostructures in high magnetic fields, concentrating on the effects of the applied magnetic field on orbital motion (wave function extent), which is probed in experiments on large ensembles. We present an overview of the physics of excitons in high magnetic fields in 3- and 2-D before introducing the zero-dimensional case. We then discuss the physics of quantum-dot excitons in high magnetic fields with particular attention to the approximate analytical models used to interpret experimental results. This is followed by a brief description of a typical high-field magneto-photoluminescence setup. We then present four examples of magneto-photoluminescence experiments on different materials systems chosen from our own research to illustrate how high magnetic fields can be used to reveal new insights into the physics of semiconductor nanostructures.
U2 - 10.1002/bio.2342
DO - 10.1002/bio.2342
M3 - Literature review
VL - 27
SP - 179
EP - 196
JO - Luminescence
JF - Luminescence
SN - 1522-7235
IS - 3
ER -