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High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

Research output: Contribution to journalJournal article


  • S. A. Choulis
  • A. Andreev
  • M. Merrick
  • A. R. Adams
  • B. N. Murdin
  • A. Krier
  • V. V. Sherstnev
<mark>Journal publication date</mark>24/02/2003
<mark>Journal</mark>Applied Physics Letters
Issue number8
Number of pages3
Pages (from-to)1149-1151
<mark>Original language</mark>English


The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.

Bibliographic note

Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (8), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/1149/1