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    Rights statement: C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111

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H-tailored surface conductivity in narrow band gap In(AsN)

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H-tailored surface conductivity in narrow band gap In(AsN). / Velichko, A. V.; Patane, A.; Capizzi, M.; Sandall, I. C.; Giubertoni, D.; Makarovsky, O.; Polimeni, A.; Krier, A.; Zhuang, Q.; Tan, C. H.

In: Applied Physics Letters, Vol. 106, No. 2, 022111, 12.01.2015.

Research output: Contribution to journalJournal article

Harvard

Velichko, AV, Patane, A, Capizzi, M, Sandall, IC, Giubertoni, D, Makarovsky, O, Polimeni, A, Krier, A, Zhuang, Q & Tan, CH 2015, 'H-tailored surface conductivity in narrow band gap In(AsN)', Applied Physics Letters, vol. 106, no. 2, 022111. https://doi.org/10.1063/1.4906111

APA

Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., ... Tan, C. H. (2015). H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106(2), [022111]. https://doi.org/10.1063/1.4906111

Vancouver

Velichko AV, Patane A, Capizzi M, Sandall IC, Giubertoni D, Makarovsky O et al. H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters. 2015 Jan 12;106(2). 022111. https://doi.org/10.1063/1.4906111

Author

Velichko, A. V. ; Patane, A. ; Capizzi, M. ; Sandall, I. C. ; Giubertoni, D. ; Makarovsky, O. ; Polimeni, A. ; Krier, A. ; Zhuang, Q. ; Tan, C. H. / H-tailored surface conductivity in narrow band gap In(AsN). In: Applied Physics Letters. 2015 ; Vol. 106, No. 2.

Bibtex

@article{f53f5bf9970c4cfe8d58fd49ecc7218b,
title = "H-tailored surface conductivity in narrow band gap In(AsN)",
abstract = "We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.",
author = "Velichko, {A. V.} and A. Patane and M. Capizzi and Sandall, {I. C.} and D. Giubertoni and O. Makarovsky and A. Polimeni and A. Krier and Q. Zhuang and Tan, {C. H.}",
note = "VC 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111",
year = "2015",
month = "1",
day = "12",
doi = "10.1063/1.4906111",
language = "English",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - H-tailored surface conductivity in narrow band gap In(AsN)

AU - Velichko, A. V.

AU - Patane, A.

AU - Capizzi, M.

AU - Sandall, I. C.

AU - Giubertoni, D.

AU - Makarovsky, O.

AU - Polimeni, A.

AU - Krier, A.

AU - Zhuang, Q.

AU - Tan, C. H.

N1 - VC 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111

PY - 2015/1/12

Y1 - 2015/1/12

N2 - We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

AB - We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

U2 - 10.1063/1.4906111

DO - 10.1063/1.4906111

M3 - Journal article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022111

ER -