Rights statement: C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - H-tailored surface conductivity in narrow band gap In(AsN)
AU - Velichko, A. V.
AU - Patane, A.
AU - Capizzi, M.
AU - Sandall, I. C.
AU - Giubertoni, D.
AU - Makarovsky, O.
AU - Polimeni, A.
AU - Krier, A.
AU - Zhuang, Q.
AU - Tan, C. H.
N1 - VC 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111
PY - 2015/1/12
Y1 - 2015/1/12
N2 - We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
AB - We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
U2 - 10.1063/1.4906111
DO - 10.1063/1.4906111
M3 - Journal article
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
M1 - 022111
ER -