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Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy

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Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy. / Kolosov, Oleg; Castell, Martin R. ; Marsh, Chris D. et al.
In: Physical review letters, Vol. 81, No. 5, 03.08.1998, p. 1046-1049.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kolosov, O, Castell, MR, Marsh, CD, Briggs, GAD, Kamins, TI & Williams, RS 1998, 'Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy', Physical review letters, vol. 81, no. 5, pp. 1046-1049. https://doi.org/10.1103/PhysRevLett.81.1046

APA

Kolosov, O., Castell, M. R., Marsh, C. D., Briggs, G. A. D., Kamins, T. I., & Williams, R. S. (1998). Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy. Physical review letters, 81(5), 1046-1049. https://doi.org/10.1103/PhysRevLett.81.1046

Vancouver

Kolosov O, Castell MR, Marsh CD, Briggs GAD, Kamins TI, Williams RS. Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy. Physical review letters. 1998 Aug 3;81(5):1046-1049. doi: 10.1103/PhysRevLett.81.1046

Author

Kolosov, Oleg ; Castell, Martin R. ; Marsh, Chris D. et al. / Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy. In: Physical review letters. 1998 ; Vol. 81, No. 5. pp. 1046-1049.

Bibtex

@article{e314a08832c943a89fbd42e82ef7a804,
title = "Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy",
abstract = "The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied using ultrasonic force microscopy (UFM), which combines the sensitivity to elastic structure of acoustic microscopy with the nanoscale spatial resolution of atomic force microscopy. UFM not only images the local surface elasticity variations between the Ge dots and the substrate with a spatial resolution of about 5 nm, but is also capable of detecting the strain variation across the dot, via the modification of the local stiffness.",
author = "Oleg Kolosov and Castell, {Martin R.} and Marsh, {Chris D.} and Briggs, {G. Andrew D.} and Kamins, {T. I.} and Williams, {R. Stanley}",
year = "1998",
month = aug,
day = "3",
doi = "10.1103/PhysRevLett.81.1046",
language = "English",
volume = "81",
pages = "1046--1049",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "5",

}

RIS

TY - JOUR

T1 - Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy

AU - Kolosov, Oleg

AU - Castell, Martin R.

AU - Marsh, Chris D.

AU - Briggs, G. Andrew D.

AU - Kamins, T. I.

AU - Williams, R. Stanley

PY - 1998/8/3

Y1 - 1998/8/3

N2 - The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied using ultrasonic force microscopy (UFM), which combines the sensitivity to elastic structure of acoustic microscopy with the nanoscale spatial resolution of atomic force microscopy. UFM not only images the local surface elasticity variations between the Ge dots and the substrate with a spatial resolution of about 5 nm, but is also capable of detecting the strain variation across the dot, via the modification of the local stiffness.

AB - The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied using ultrasonic force microscopy (UFM), which combines the sensitivity to elastic structure of acoustic microscopy with the nanoscale spatial resolution of atomic force microscopy. UFM not only images the local surface elasticity variations between the Ge dots and the substrate with a spatial resolution of about 5 nm, but is also capable of detecting the strain variation across the dot, via the modification of the local stiffness.

U2 - 10.1103/PhysRevLett.81.1046

DO - 10.1103/PhysRevLett.81.1046

M3 - Journal article

VL - 81

SP - 1046

EP - 1049

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 5

ER -