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Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

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Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence. / Cornet, Charles; Levallois, Christophe; Caroff, P. et al.
In: Applied Physics Letters, Vol. 87, No. 23, 233111, 30.11.2005, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cornet, C, Levallois, C, Caroff, P, Folliot, H, Labbé, C, Even, J, Le Corre, A, Loualiche, S, Hayne, M & Moshchalkov, VV 2005, 'Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.', Applied Physics Letters, vol. 87, no. 23, 233111, pp. -. https://doi.org/10.1063/1.2132527

APA

Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M., & Moshchalkov, V. V. (2005). Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence. Applied Physics Letters, 87(23), -. Article 233111. https://doi.org/10.1063/1.2132527

Vancouver

Cornet C, Levallois C, Caroff P, Folliot H, Labbé C, Even J et al. Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence. Applied Physics Letters. 2005 Nov 30;87(23):-. 233111. doi: 10.1063/1.2132527

Author

Cornet, Charles ; Levallois, Christophe ; Caroff, P. et al. / Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence. In: Applied Physics Letters. 2005 ; Vol. 87, No. 23. pp. -.

Bibtex

@article{196d1bdf785d4b8f86d7606d060b9881,
title = "Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.",
abstract = "We have used magnetophotoluminescence to study the impact of different capping layer material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on lateral confinement in InAs/InP quantum dots (QDs) grown on (311)B orientated substrates. Exciton effective masses, Bohr radii, and binding energies are measured for these samples. Conclusions regarding the strength of the lateral confinement in the different samples are supported by photoluminescence at high excitation power. Contrary to theoretical predictions, InAs QDs in quaternary alloy are found to have better confinement properties than InAs/InP QDs. This is attributed to a lack of lateral intermixing with the quaternary alloy, which is present when InP is used to (partially) cap the dots. The implications of the results for reducing the temperature sensitivity of QD lasers are discussed. {\textcopyright}2005 American Institute of Physics",
author = "Charles Cornet and Christophe Levallois and P. Caroff and Herv{\'e} Folliot and Christophe Labb{\'e} and Jacky Even and {Le Corre}, Alain and Slimane Loualiche and Manus Hayne and Moshchalkov, {Victor V.}",
note = "Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 87 (23), 2005 and may be found at http://link.aip.org/link/?APPLAB/87/233111/1 High-field magnetophotoluminescence was used to select the best capping material for InAs/InP quantum dot lasers, leading to the World's lowest threshold current density at 1.55 ?m. International collaboration. Hayne supervised the experiment, data analysis, and preparation of the paper. RAE_import_type : Journal article RAE_uoa_type : Physics",
year = "2005",
month = nov,
day = "30",
doi = "10.1063/1.2132527",
language = "English",
volume = "87",
pages = "--",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "23",

}

RIS

TY - JOUR

T1 - Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

AU - Cornet, Charles

AU - Levallois, Christophe

AU - Caroff, P.

AU - Folliot, Hervé

AU - Labbé, Christophe

AU - Even, Jacky

AU - Le Corre, Alain

AU - Loualiche, Slimane

AU - Hayne, Manus

AU - Moshchalkov, Victor V.

N1 - Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 87 (23), 2005 and may be found at http://link.aip.org/link/?APPLAB/87/233111/1 High-field magnetophotoluminescence was used to select the best capping material for InAs/InP quantum dot lasers, leading to the World's lowest threshold current density at 1.55 ?m. International collaboration. Hayne supervised the experiment, data analysis, and preparation of the paper. RAE_import_type : Journal article RAE_uoa_type : Physics

PY - 2005/11/30

Y1 - 2005/11/30

N2 - We have used magnetophotoluminescence to study the impact of different capping layer material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on lateral confinement in InAs/InP quantum dots (QDs) grown on (311)B orientated substrates. Exciton effective masses, Bohr radii, and binding energies are measured for these samples. Conclusions regarding the strength of the lateral confinement in the different samples are supported by photoluminescence at high excitation power. Contrary to theoretical predictions, InAs QDs in quaternary alloy are found to have better confinement properties than InAs/InP QDs. This is attributed to a lack of lateral intermixing with the quaternary alloy, which is present when InP is used to (partially) cap the dots. The implications of the results for reducing the temperature sensitivity of QD lasers are discussed. ©2005 American Institute of Physics

AB - We have used magnetophotoluminescence to study the impact of different capping layer material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on lateral confinement in InAs/InP quantum dots (QDs) grown on (311)B orientated substrates. Exciton effective masses, Bohr radii, and binding energies are measured for these samples. Conclusions regarding the strength of the lateral confinement in the different samples are supported by photoluminescence at high excitation power. Contrary to theoretical predictions, InAs QDs in quaternary alloy are found to have better confinement properties than InAs/InP QDs. This is attributed to a lack of lateral intermixing with the quaternary alloy, which is present when InP is used to (partially) cap the dots. The implications of the results for reducing the temperature sensitivity of QD lasers are discussed. ©2005 American Institute of Physics

U2 - 10.1063/1.2132527

DO - 10.1063/1.2132527

M3 - Journal article

VL - 87

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 23

M1 - 233111

ER -