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Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene

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Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene. / Snizhko, Kyrylo; Cheianov, Vadim; Simon, Steven H.
In: Physical review B, Vol. 85, No. 20, 201415, 29.05.2012.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Snizhko K, Cheianov V, Simon SH. Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene. Physical review B. 2012 May 29;85(20):201415. doi: 10.1103/PhysRevB.85.201415

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Snizhko, Kyrylo ; Cheianov, Vadim ; Simon, Steven H. / Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene. In: Physical review B. 2012 ; Vol. 85, No. 20.

Bibtex

@article{ded34c1ed70b4db499f24e50712fe3c1,
title = "Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene",
abstract = "Several recent works have proposed that electron-electron interactions in bilayer graphene can be tuned with the help of external parameters, making it possible to stabilize different fractional quantum Hall states. In these prior works, phase diagrams were calculated based on a single Landau level approximation. We go beyond this approximation and investigate the influence of polarization effects and virtual interband transitions on the stability of fractional quantum Hall states in bilayer graphene. We find that for realistic values of the dielectric constant, the phase diagram is strongly modified by these effects. We illustrate this by evaluating the region of stability of the Pfaffian state.",
author = "Kyrylo Snizhko and Vadim Cheianov and Simon, {Steven H.}",
note = "{\textcopyright}2012 American Physical Society ",
year = "2012",
month = may,
day = "29",
doi = "10.1103/PhysRevB.85.201415",
language = "English",
volume = "85",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "20",

}

RIS

TY - JOUR

T1 - Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene

AU - Snizhko, Kyrylo

AU - Cheianov, Vadim

AU - Simon, Steven H.

N1 - ©2012 American Physical Society

PY - 2012/5/29

Y1 - 2012/5/29

N2 - Several recent works have proposed that electron-electron interactions in bilayer graphene can be tuned with the help of external parameters, making it possible to stabilize different fractional quantum Hall states. In these prior works, phase diagrams were calculated based on a single Landau level approximation. We go beyond this approximation and investigate the influence of polarization effects and virtual interband transitions on the stability of fractional quantum Hall states in bilayer graphene. We find that for realistic values of the dielectric constant, the phase diagram is strongly modified by these effects. We illustrate this by evaluating the region of stability of the Pfaffian state.

AB - Several recent works have proposed that electron-electron interactions in bilayer graphene can be tuned with the help of external parameters, making it possible to stabilize different fractional quantum Hall states. In these prior works, phase diagrams were calculated based on a single Landau level approximation. We go beyond this approximation and investigate the influence of polarization effects and virtual interband transitions on the stability of fractional quantum Hall states in bilayer graphene. We find that for realistic values of the dielectric constant, the phase diagram is strongly modified by these effects. We illustrate this by evaluating the region of stability of the Pfaffian state.

U2 - 10.1103/PhysRevB.85.201415

DO - 10.1103/PhysRevB.85.201415

M3 - Journal article

VL - 85

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 20

M1 - 201415

ER -