We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > InAsSb/lnAsSbP light emitting diodes for the de...
View graph of relations

« Back

InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

Research output: Contribution to journalJournal article


  • H H Gao
  • A Krier
  • V Sherstnev
  • Y Yakovlev
Journal publication date7/08/1999
JournalJournal of Physics D: Applied Physics
Number of pages5
Original languageEnglish


This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.