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InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

Research output: Contribution to journalJournal article

Published

  • H H Gao
  • A Krier
  • V Sherstnev
  • Y Yakovlev
Journal publication date7/08/1999
JournalJournal of Physics D-Applied Physics
Journal number15
Volume32
Number of pages5
Pages1768-1772
Original languageEnglish

Abstract

This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.