TY - JOUR

T1 - InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

AU - Gao, H H

AU - Krier, A

AU - Sherstnev, V

AU - Yakovlev, Y

PY - 1999/8/7

Y1 - 1999/8/7

N2 - This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.

AB - This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.

U2 - 10.1088/0022-3727/32/15/302

DO - 10.1088/0022-3727/32/15/302

M3 - Journal article

VL - 32

SP - 1768

EP - 1772

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 15

ER -