Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
AU - Gao, H H
AU - Krier, A
AU - Sherstnev, V
AU - Yakovlev, Y
PY - 1999/8/7
Y1 - 1999/8/7
N2 - This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.
AB - This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.
U2 - 10.1088/0022-3727/32/15/302
DO - 10.1088/0022-3727/32/15/302
M3 - Journal article
VL - 32
SP - 1768
EP - 1772
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 15
ER -