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InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature. / Gao, H H ; Krier, A ; Sherstnev, V et al.
In: Journal of Physics D: Applied Physics, Vol. 32, No. 15, 07.08.1999, p. 1768-1772.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Gao, HH, Krier, A, Sherstnev, V & Yakovlev, Y 1999, 'InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature', Journal of Physics D: Applied Physics, vol. 32, no. 15, pp. 1768-1772. https://doi.org/10.1088/0022-3727/32/15/302

APA

Gao, H. H., Krier, A., Sherstnev, V., & Yakovlev, Y. (1999). InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature. Journal of Physics D: Applied Physics, 32(15), 1768-1772. https://doi.org/10.1088/0022-3727/32/15/302

Vancouver

Gao HH, Krier A, Sherstnev V, Yakovlev Y. InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature. Journal of Physics D: Applied Physics. 1999 Aug 7;32(15):1768-1772. doi: 10.1088/0022-3727/32/15/302

Author

Gao, H H ; Krier, A ; Sherstnev, V et al. / InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature. In: Journal of Physics D: Applied Physics. 1999 ; Vol. 32, No. 15. pp. 1768-1772.

Bibtex

@article{03840773856c4550a767770ebf3b3449,
title = "InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature",
abstract = "This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.",
author = "Gao, {H H} and A Krier and V Sherstnev and Y Yakovlev",
year = "1999",
month = aug,
day = "7",
doi = "10.1088/0022-3727/32/15/302",
language = "English",
volume = "32",
pages = "1768--1772",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "15",

}

RIS

TY - JOUR

T1 - InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

AU - Gao, H H

AU - Krier, A

AU - Sherstnev, V

AU - Yakovlev, Y

PY - 1999/8/7

Y1 - 1999/8/7

N2 - This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.

AB - This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.

U2 - 10.1088/0022-3727/32/15/302

DO - 10.1088/0022-3727/32/15/302

M3 - Journal article

VL - 32

SP - 1768

EP - 1772

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 15

ER -