Research output: Contribution to journal › Journal article
|Journal publication date||21/10/1999|
|Journal||Journal of Physics D-Applied Physics|
|Number of pages||3|
We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.