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InAsSbP quantum dots grown by liquid phase epitaxy

Research output: Contribution to journalJournal article

Published

Journal publication date21/10/1999
JournalJournal of Physics D-Applied Physics
Journal number20
Volume32
Number of pages3
Pages2587-2589
Original languageEnglish

Abstract

We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.