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InAsSbP quantum dots grown by liquid phase epitaxy

Research output: Contribution to journalJournal article

Published
<mark>Journal publication date</mark>21/10/1999
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number20
Volume32
Number of pages3
Pages (from-to)2587-2589
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.