Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||21/10/1999|
|<mark>Journal</mark>||Journal of Physics D: Applied Physics|
|Number of pages||3|
We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.