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    Rights statement: Fernando Jiménez Urbanos, Andrés Black, Ramón Bernardo-Gavito, Manuel R. Osorio, Santiago Casado, Daniel Granados, "Innovative patterning method for modifying few-layer MoS2 device geometries", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702; http://dx.doi.org/10.1117/12.2272702 Copyright 2017 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.

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Innovative patterning method for modifying few-layer MoS2 device geometries

Research output: Contribution to journalJournal article

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Innovative patterning method for modifying few-layer MoS2 device geometries. / J. Urbanos, F.; Black, Andrés; Bernardo Gavito, Ramon; Rodriguez-Osorio, Manuel; Casado, Santiago; Granados, Daniel.

In: Proceedings of SPIE, Vol. 10354, 31.08.2017, p. 103540G.

Research output: Contribution to journalJournal article

Harvard

J. Urbanos, F, Black, A, Bernardo Gavito, R, Rodriguez-Osorio, M, Casado, S & Granados, D 2017, 'Innovative patterning method for modifying few-layer MoS2 device geometries' Proceedings of SPIE, vol. 10354, pp. 103540G. https://doi.org/10.1117/12.2272702

APA

J. Urbanos, F., Black, A., Bernardo Gavito, R., Rodriguez-Osorio, M., Casado, S., & Granados, D. (2017). Innovative patterning method for modifying few-layer MoS2 device geometries. Proceedings of SPIE, 10354, 103540G. https://doi.org/10.1117/12.2272702

Vancouver

J. Urbanos F, Black A, Bernardo Gavito R, Rodriguez-Osorio M, Casado S, Granados D. Innovative patterning method for modifying few-layer MoS2 device geometries. Proceedings of SPIE. 2017 Aug 31;10354:103540G. https://doi.org/10.1117/12.2272702

Author

J. Urbanos, F. ; Black, Andrés ; Bernardo Gavito, Ramon ; Rodriguez-Osorio, Manuel ; Casado, Santiago ; Granados, Daniel. / Innovative patterning method for modifying few-layer MoS2 device geometries. In: Proceedings of SPIE. 2017 ; Vol. 10354. pp. 103540G.

Bibtex

@article{3962f31fe24f473a8ae44deafb36de2a,
title = "Innovative patterning method for modifying few-layer MoS2 device geometries",
abstract = "When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.",
author = "{J. Urbanos}, F. and Andr{\'e}s Black and {Bernardo Gavito}, Ramon and Manuel Rodriguez-Osorio and Santiago Casado and Daniel Granados",
note = "Fernando Jim{\'e}nez Urbanos, Andr{\'e}s Black, Ram{\'o}n Bernardo-Gavito, Manuel R. Osorio, Santiago Casado, Daniel Granados, {"}Innovative patterning method for modifying few-layer MoS2 device geometries{"}, Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702; http://dx.doi.org/10.1117/12.2272702 Copyright 2017 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.",
year = "2017",
month = "8",
day = "31",
doi = "10.1117/12.2272702",
language = "English",
volume = "10354",
pages = "103540G",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - Innovative patterning method for modifying few-layer MoS2 device geometries

AU - J. Urbanos, F.

AU - Black, Andrés

AU - Bernardo Gavito, Ramon

AU - Rodriguez-Osorio, Manuel

AU - Casado, Santiago

AU - Granados, Daniel

N1 - Fernando Jiménez Urbanos, Andrés Black, Ramón Bernardo-Gavito, Manuel R. Osorio, Santiago Casado, Daniel Granados, "Innovative patterning method for modifying few-layer MoS2 device geometries", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702; http://dx.doi.org/10.1117/12.2272702 Copyright 2017 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.

PY - 2017/8/31

Y1 - 2017/8/31

N2 - When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.

AB - When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.

U2 - 10.1117/12.2272702

DO - 10.1117/12.2272702

M3 - Journal article

VL - 10354

SP - 103540G

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

ER -