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Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

Research output: Contribution to journalJournal article

  • K. D. Moiseev
  • A. Krier
  • M. P. Mikhailova
  • Y. P. Yakovlev
<mark>Journal publication date</mark>7/04/2002
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number7
Number of pages6
Pages (from-to)631-636
<mark>Original language</mark>English


Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.