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Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers

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Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers. / Falko, Vladimir.
In: Journal of Physics: Condensed Matter, Vol. 2, No. 16, 23.04.1990, p. 3797-3802.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Falko V. Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers. Journal of Physics: Condensed Matter. 1990 Apr 23;2(16):3797-3802. doi: 10.1088/0953-8984/2/16/009

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Falko, Vladimir. / Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers. In: Journal of Physics: Condensed Matter. 1990 ; Vol. 2, No. 16. pp. 3797-3802.

Bibtex

@article{5cbcb1f4d8bf4c1fb9329cfe56b799fd,
title = "Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers",
abstract = "A method of calculating the longitudinal magnetoresistance of ultrathin films or inversion layers in MOS structures with sufficient size quantisation of transverse electron motion is proposed within the framework of the theory of weak localisation. The cases when a single subband and several subbands of size quantisation are filled are discussed. It is shown that in all studied cases the magnetoresistance is negative and depends on the ratio H2/T, so that it can be distinguished experimentally from the H/T-dependences of electron-electron interaction corrections to conductivity. Extension of the obtained results to the magnetoresistance calculation of quasi-1D channel is also discussed.",
author = "Vladimir Falko",
year = "1990",
month = apr,
day = "23",
doi = "10.1088/0953-8984/2/16/009",
language = "English",
volume = "2",
pages = "3797--3802",
journal = "Journal of Physics: Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd",
number = "16",

}

RIS

TY - JOUR

T1 - Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers

AU - Falko, Vladimir

PY - 1990/4/23

Y1 - 1990/4/23

N2 - A method of calculating the longitudinal magnetoresistance of ultrathin films or inversion layers in MOS structures with sufficient size quantisation of transverse electron motion is proposed within the framework of the theory of weak localisation. The cases when a single subband and several subbands of size quantisation are filled are discussed. It is shown that in all studied cases the magnetoresistance is negative and depends on the ratio H2/T, so that it can be distinguished experimentally from the H/T-dependences of electron-electron interaction corrections to conductivity. Extension of the obtained results to the magnetoresistance calculation of quasi-1D channel is also discussed.

AB - A method of calculating the longitudinal magnetoresistance of ultrathin films or inversion layers in MOS structures with sufficient size quantisation of transverse electron motion is proposed within the framework of the theory of weak localisation. The cases when a single subband and several subbands of size quantisation are filled are discussed. It is shown that in all studied cases the magnetoresistance is negative and depends on the ratio H2/T, so that it can be distinguished experimentally from the H/T-dependences of electron-electron interaction corrections to conductivity. Extension of the obtained results to the magnetoresistance calculation of quasi-1D channel is also discussed.

U2 - 10.1088/0953-8984/2/16/009

DO - 10.1088/0953-8984/2/16/009

M3 - Journal article

VL - 2

SP - 3797

EP - 3802

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

SN - 0953-8984

IS - 16

ER -