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Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. / Cheetham, K. J.; Carrington, P. J.; Cook, N. B. et al.
In: Solar Energy Materials and Solar Cells, Vol. 95, No. 2, 02.2011, p. 534-537.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cheetham, KJ, Carrington, PJ, Cook, NB & Krier, A 2011, 'Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes', Solar Energy Materials and Solar Cells, vol. 95, no. 2, pp. 534-537. https://doi.org/10.1016/j.solmat.2010.08.036

APA

Cheetham, K. J., Carrington, P. J., Cook, N. B., & Krier, A. (2011). Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. Solar Energy Materials and Solar Cells, 95(2), 534-537. https://doi.org/10.1016/j.solmat.2010.08.036

Vancouver

Cheetham KJ, Carrington PJ, Cook NB, Krier A. Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. Solar Energy Materials and Solar Cells. 2011 Feb;95(2):534-537. doi: 10.1016/j.solmat.2010.08.036

Author

Cheetham, K. J. ; Carrington, P. J. ; Cook, N. B. et al. / Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. In: Solar Energy Materials and Solar Cells. 2011 ; Vol. 95, No. 2. pp. 534-537.

Bibtex

@article{38b58913b52f4f84902b102b613715bf,
title = "Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes",
abstract = "The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were fabricated, which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0-4.5 mu m at room temperature. (C) 2010 Elsevier B.V. All rights reserved.",
keywords = "Pentanary, Thermophotovoltaic , LPE , Photoluminescence",
author = "Cheetham, {K. J.} and Carrington, {P. J.} and Cook, {N. B.} and A. Krier",
year = "2011",
month = feb,
doi = "10.1016/j.solmat.2010.08.036",
language = "English",
volume = "95",
pages = "534--537",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "2",

}

RIS

TY - JOUR

T1 - Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

AU - Cheetham, K. J.

AU - Carrington, P. J.

AU - Cook, N. B.

AU - Krier, A.

PY - 2011/2

Y1 - 2011/2

N2 - The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were fabricated, which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0-4.5 mu m at room temperature. (C) 2010 Elsevier B.V. All rights reserved.

AB - The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were fabricated, which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0-4.5 mu m at room temperature. (C) 2010 Elsevier B.V. All rights reserved.

KW - Pentanary

KW - Thermophotovoltaic

KW - LPE

KW - Photoluminescence

U2 - 10.1016/j.solmat.2010.08.036

DO - 10.1016/j.solmat.2010.08.036

M3 - Journal article

VL - 95

SP - 534

EP - 537

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 2

ER -